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10N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - nELL

भाग संख्या 10N80
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
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<?=10N80?> डेटा पत्रक पीडीएफ

10N80 pdf
SEMICONDUCTOR
10N80 Series RRooHHSS
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
Nell High Power Products
TO-3PB
TO-220F
TO-3PB
TO-220F
MIN.
TYP.
MAX. UNIT
0.52
3.4
ºC/W
40
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250μA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250μA, VDS =VGS
IDSS
Drain to source leakage current
VDS=800V, VGS=0V
VDS=640V, VGS=0V
TC=25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS= 0V
VGS = -30V, VDS= 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance VGS=10V, lD=5A
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
800
3
0.98
0.9
V
V/ºC
10
μA
100
100
-100
nA
1.1 Ω
5V
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
VDS=25V, VGS=0V, f=1MHz
2150
180
15
2800
230
20
pF
td(ON)
tr
td(OFF)
tf
QG
QGS
QGD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD=400V, VGS=10V
ID=10A, RGS=25Ω (Note1,2)
VDD= 640V, VGS=10V
ID=10A, (Note1,2)
50 110
130 270
ns
90 190
80 170
45 58
13.5
nC
17
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VSD Diode forward voltage
ISD = 10A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
TO-220F
G
(Gate)
10
A
40
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
S (Source)
ISD = 10A, VGS = 0V,
dIF/dt = 100A/µs
730
10.9
ns
μC
www.nellsemi.com
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