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UP3855 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SILICON TRANSISTOR - UTC

भाग संख्या UP3855
समारोह PNP SILICON TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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UP3855 pdf
UP3855
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-180
-140
V
V
Emitter-Base Voltage
Continuous Collector Current (Note 1)
VEBO
IC
-7
-4
V
A
Peak Pulse Current
Power Dissipation
ICM -10 A
PD
3.0 (Note 1)
1.6 (Note 2)
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCE
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
42 (Note 1)
78 (Note 2)
°C/W
Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz
copper, in still air conditions.
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz
copper, in still air conditions.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
VCBO
VCER
IC=-100μA
IC=-1μA, RB1k
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCEO
VEBO
IC=-10mA (Note 1)
IE=-100μA
Collector Cut-Off Current
ICBO
VCB=-150V
VCB=-150V, TA=100°C
Collector Cut-Off Current
ICER
VCB=-150V,
R1k
TA=100°C
Emitter Cut-Off Current
IEBO
VEB=-6V
IC=-0.1A, IB=-5mA
Collector-Emitter Saturation Voltage
(Note 1)
VCE(SAT)
IC=-0.5A, IB=-50mA
IC=-1A, IB=-100mA
Base-Emitter Saturation Voltage
IC=-3A, IB=-300mA
VBE(SAT) IC=-3A, IB=-300mA(Note 1)
Base-Emitter Turn-On Voltage
VBE(ON) IC=-3A, VCE=-5V (Note 1)
IC=-10mA, VCE=-5V
Static Forward Current Transfer
Ratio (Note 1)
hFE
IC=-1A, VCE=-5V
IC=-3A, VCE=-5V
IC=-10A, VCE=-5V
Transition Frequency
fT
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance (Note 1)
COBO VCB=-10V, f=1MHz
Switching Times
tON IC=-1A, VCC=-50V,
tOFF IB1=-IB2=-100mA
Note: 1. Measured under pulsed conditions. Pulse width300μs; duty cycle2%.
MIN
-180
-180
-140
-7.0
100
100
45
TYP
-200
-200
-160
-8.0
<1
<1
<1
-40
-55
-85
-275
-940
-830
225
200
100
5
120
33
150
750
MAX
-20
-0.5
-20
-0.5
-10
-60
-80
-120
-360
-1040
-930
300
UNIT
V
V
V
V
nA
μA
nA
μA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R225-007.A

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भाग संख्याविवरणविनिर्माण
UP3855PNP SILICON TRANSISTORUTC
UTC


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