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UG25N45 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON TRANSISTOR - Unisonic Technologies

भाग संख्या UG25N45
समारोह NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=UG25N45?> डेटा पत्रक पीडीएफ

UG25N45 pdf
UG25N45
Preliminary
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Current
Pulsed Collector Current
Power Dissipation @ TC=25°C
Junction Temperature
Operating Temperature
Storage Temperature
VCEO
VGEO
IGEP
ICP
PD
TJ
TOPR
TSTG
450
±6
±8
150
2.5
+150
-55 ~ +150
-55 ~ +150
V
V
A
A
W
°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θJA
MIN
TYP
MAX
50
UNIT
/W
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
Gate-Emitter Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SYMBOL
TEST CONDITIONS
VCE(SAT)
ICES
IGES
VGE=4.5V, ICP=150A (Pulsed)
VCE=450V, VGE=0 V
VGE=±6V, VCE=0V
VGE(TH) VCE=VGE, IC=250uA
CIES
COES
CRES
VGE=0V, VCE=25V, f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
QG
QGE
QGC
VCC=225V, IC =50A, RG=25,
VGE=10V
VCE=360V, VGE=4.5V, IC=50A
MIN TYP MAX UNIT
6 8V
10
10
uA
0.35 1.2 V
2227
200
79
pF
pF
pF
11.5 ns
24.5 ns
150 ns
3.3 ns
64.5 nC
7 nC
30 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-037.a

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UG25N45NPN SILICON TRANSISTORUnisonic Technologies
Unisonic Technologies


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