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UG25N120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPT TRENCH IGBT - Unisonic Technologies

भाग संख्या UG25N120
समारोह NPT TRENCH IGBT
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=UG25N120?> डेटा पत्रक पीडीएफ

UG25N120 pdf
UG25N120
Preliminary
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
1200
±20
V
V
Continuous Collector Current
TC=25°C
TC=100°C
IC
50 A
25 A
Collector Current Pulsed (Note 1)
ICM
75
A
Diode Continuous Forward Current (TC=100°C)
IF
25 A
Diode Maximum Forward Current
Power Dissipation TC=25°C
TO-220
TO-247
IFM
PD
150 A
89
200
W
Operating Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-247
TO-220
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
40
1.4
0.62
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-050.a

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UG25N120NPT TRENCH IGBTUnisonic Technologies
Unisonic Technologies


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