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UG10N120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL IGBT - Unisonic Technologies

भाग संख्या UG10N120
समारोह N-CHANNEL IGBT
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=UG10N120?> डेटा पत्रक पीडीएफ

UG10N120 pdf
UG10N120
Preliminary
Insulated Gate Bipolar Transistor
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Collector Current Continuous
TC=25°C
TC=110°C
IC
35 A
17 A
Collector Current Pulsed (Note 1)
ICM 80 A
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
PD
298 W
2.38 W/°C
Forward Voltage Avalanche Energy (Note 2)
EAV
80 mJ
Short Circuit Withstand Time (Note 3) at VGE=15V
tSC
8 µs
Short Circuit Withstand Time (Note 3) at VGE=12V
tSC
15 µs
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=20A, L=400µH, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=10.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
0.42
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
SYMBOL
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trl
td(OFF)I
tfl
TEST CONDITIONS
IC=250µA, VGE=0V
IC=10mA, VGE=0V
VCE=1200V
TC=25°C
TC=125°C
IC=10A, VGE=15V
IC=90µA, VCE=VGE
TC=150°C
TC=25°C
TC=150°C
VGE=±20V
TJ=150°C, RG=10, VGE=15V,
L=400µH, VCE(PK)=1200V
IC=10A, VCE=600V
IC=10A, VCE=600V
VGE=15V
VGE=20V
IGBT and Diode at TJ=25°C
ICE=1A, VCE=30V, VGE=15V,
RG=10
MIN TYP MAX UNIT
1200
V
15 V
250 µA
150 µA
2 mA
2.45 2.7 V
3.7 4.2 V
6.0 6.8
V
±250 nA
55 A
10.4
100 120
130 150
250
400
275
165
V
nC
nC
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-027.a

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UG10N120N-CHANNEL IGBTUnisonic Technologies
Unisonic Technologies


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