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UF3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - UTC

भाग संख्या UF3055
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=UF3055?> डेटा पत्रक पीडीएफ

UF3055 pdf
UF3055
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS = 10M)
VDGR
60
V
Gate Source Voltage
Continuous
Non-Repetitive (tP 10 ms)
VGSS
±20
±30
V
V
Continuous Drain Current (TA = 25°C)
ID
3.0 A
Pulsed Drain Current (tP 10 µs)
IDM 9.0 A
Single Pulsed Avalanche Energy (Note 2)
EAS
74
mJ
Power Dissipation (TA = 25°C)
SOT-223
TO-252
PD
0.8
1.13
W
Junction Temperature
TJ 150 °C
Strong Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note)
SOT-223
TO-252
θJA
150
110
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 1)
Temperature Coefficient (Positive)
BVDSS VGS= 0V, ID =250µA
60 68
66
V
mV/°C
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain-Source On-State Resistance
Static Drain-to-Source On-Resistance
Forward Tran conductance
IDSS VGS=0V, VDS=60V
IGSS VGS = ±20 V, VDS =0V
VGS(TH) VGS=VDS, ID =250µA
RDS(ON)
VDS(ON)
gFS
VGS =10 V, ID =1.5A
VGS =10 V, ID =3A
VDS=8.0V, ID=1.7A
1.0 µA
±100 nA
2.0 3.0 4.0 V
6.6 mV/°C
50 110 m
0.15 0.40 V
3.2 M
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
CISS
COSS
CRSS
VGS =0 V, VDS =25 V, f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V, VDD=30V, ID =3.0A ,
RG =9.1(Note 1)
VGS =10V, VDS =48V, ID =3.0A
(Note 1)
700 780
180 210
20 50
pF
pF
pF
50 70 ns
40 60 ns
95 115 ns
30 50 ns
50 70 nC
6 nC
3 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD VGS=0V, IS=3.0A
tRR
Body Diode Reverse Recovery Time
tA VGS=0V, IS=3.0A,
tB dI/dt=100 A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. Switching characteristics are independent of operating junction temperatures.
0.89 1.0
30
22
8.6
0.04
V
ns
ns
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-443.B

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UF3055N-CHANNEL POWER MOSFETUTC
UTC


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