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UP2855 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP MEDIUM POWER LOW SATURATION TRANSISTOR - Unisonic Technologies

भाग संख्या UP2855
समारोह PNP MEDIUM POWER LOW SATURATION TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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UP2855 pdf
UP2855
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 1)
Peak Pulse Current
Power Dissipation
VCBO
VCEO
VEBO
IC
ICM
PD
-180
-140
-7
-4
-10
3.0 (Note 1)
1.6 (Note 2)
V
V
V
A
A
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL RESISTANCE
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
42 (Note 1)
78 (Note 2)
°C/W
Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided
2oz copper, in still air conditions.
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided
1oz copper, in still air conditions.
„ ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
VCBO IC=-100μA
-180
Collector-Emitter Breakdown Voltage VCER IC=-1μA, RB1k
-180
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCEO
VEBO
IC=-10mA (Note 1)
IE=-100μA
-140
-7.0
Collector Cut-Off Current
Collector Cut-Off Current
ICBO
VCB=-150V
VCB=-150V, Tamb=100°C
ICER
VCB=-150V,
R1k
Tamb=100°C
Emitter Cut-Off Current
IEBO
VEB=-6V
IC=-0.1A, IB=-5mA
Collector-Emitter Saturation Voltage
(Note 1)
VCE(SAT)
IC=-0.5A, IB=-50mA
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-3A, IB=-300mA(Note 1)
Base-Emitter Turn-On Voltage
VBE(ON) IC=-3A, VCE=-5V (Note 1)
IC=-10mA, VCE=-5V
100
Static Forward Current Transfer
Ratio (Note 1)
hFE
IC=-1A, VCE=-5V
IC=-3A, VCE=-5V
IC=-10A, VCE=-5V
100
45
Transition Frequency
fT
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance (Note 1)
COBO VCB=-10V, f=1MHz
Switching Times
tON IC=-1A, VCC=-50V,
tOFF IB1=-IB2=-10mA
Note: 1. Measured under pulsed conditions. Pulse width300μs; duty cycle2%.
TYP
-200
-200
-160
-8.0
<1
<1
<1
-40
-55
-85
-275
-940
-830
225
200
100
5
120
33
42
636
MAX
-20
-0.5
-20
-0.5
-10
-60
-80
-120
-360
-1040
-930
UNIT
V
V
V
V
nA
μA
nA
μA
nA
mV
mV
mV
mV
mV
mV
300
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-024.b

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Unisonic Technologies


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