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CED08N6A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CED08N6A
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CED08N6A?> डेटा पत्रक पीडीएफ

CED08N6A pdf
CED08N6A/CEU08N6A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3.1A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 6A,
VGS = 10V,RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 6.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, IAS =6.2A, VDD = 50V, RG = 25, Starting TJ = 25 C.
Min
600
2
Typ
1.05
1280
120
11
23
8
55
8
21
5
5
Max Units
1
100
-100
V
µA
nA
nA
4V
1.25
pF
pF
pF
46 ns
16 ns
110 ns
6 ns
27 nC
nC
nC
6.2 A
1.5 V
2

विन्यास 4 पेज
डाउनलोड[ CED08N6A Datasheet.PDF ]


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