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CEP80N15 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP80N15
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP80N15?> डेटा पत्रक पीडीएफ

CEP80N15 pdf
CEP80N15/CEB80N15
CEF80N15
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 150V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
150
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 35A
2
4V
14 19 m
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 800KHz
8540
455
365
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 76V, ID = 38A,
VGS = 10V, RGEN = 5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 76V, ID = 38A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
45 90
24 48
193 386
33 66
262 340
53
83
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 76A g
76 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package IS(max) = 37A .
g.Full package VSD test condition IS = 37A .
2

विन्यास 4 पेज
डाउनलोड[ CEP80N15 Datasheet.PDF ]


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CEP80N15N-Channel Enhancement Mode Field Effect TransistorCET
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