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10N70Z-Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - Unisonic Technologies

भाग संख्या 10N70Z-Q
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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10N70Z-Q pdf
10N70Z-Q
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700 V
Gate-Source Voltage
VGSS
±20 V
Avalanche Current (Note 2)
IAR 10 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
10 A
40 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
250 mJ
15.6 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
PD 50 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
10N70Z-QN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies


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