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CHA2069-FAA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 16-32GHz Low Noise Amplifier - United Monolithic Semiconductors

भाग संख्या CHA2069-FAA
समारोह 16-32GHz Low Noise Amplifier
मैन्युफैक्चरर्स United Monolithic Semiconductors 
लोगो United Monolithic Semiconductors लोगो 
पूर्व दर्शन
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<?=CHA2069-FAA?> डेटा पत्रक पीडीएफ

CHA2069-FAA pdf
CHA2069-FAA
16-32GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4.5V, Pads B=D=E=Gnd, C=F=NC.
Symbol
Parameter
Min Typ Max Unit
Fop
G
G
NF
IS11I
IS22I
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1)
Input return loss (1)
Output return loss (1)
16 32 GHz
22 dB
1 dB
2.5 dB
10 dB
10 dB
IP3 3rd order intercept point
20 dBm
P1dB
Output power at 1dB gain compression
10 dBm
Id Drain bias current
55 75 mA
(1) These values are representative of on board measurements as defined on the drawing
99622 (see below).
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage(3)
5V
Id Drain bias current
120 mA
Pin Maximum peak input power overdrive (2)
+15 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) See chip biasing options
Ref. : DSCHA2069-FAA2356 - 21 Dec 12
2/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

विन्यास 10 पेज
डाउनलोड[ CHA2069-FAA Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CHA2069-FAA16-32GHz Low Noise AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors


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