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CHA2069-99F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 18-31GHz Low Noise Amplifier - United Monolithic Semiconductors

भाग संख्या CHA2069-99F
समारोह 18-31GHz Low Noise Amplifier
मैन्युफैक्चरर्स United Monolithic Semiconductors 
लोगो United Monolithic Semiconductors लोगो 
पूर्व दर्शन
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<?=CHA2069-99F?> डेटा पत्रक पीडीएफ

CHA2069-99F pdf
CHA2069-99F
18-31GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd
Symbol
Fop
G
Parameter
Operating frequency range
Gain (1)
Min Typ Max Unit
16 31 Ghz
18 22
dB
G Gain flatness (1)
1 1.5 dB
NF Noise figure (1)
VSWRin Input VSWR (1)
2.5
2.0:1
3.5
2.5:1
dB
VSWRout Ouput VSWR (1)
2:0:1 2.5:1
IP3 3rd order intercept point
20 dBm
P1dB Output power at 1dB gain compression
10 dBm
Id Drain bias current (2)
55 75 mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at
the RF ports.
(2) This current is the typical value from the low noise low consumption biasing (B,D, E grounded)
Absolute Maximum Ratings (3)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage (5)
Pin Maximum peak input power overdrive (4)
5.0 V
+15 dBm
Top Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(3) Operation of this device above anyone of these paramaters may cause permanent damage.
(4) Duration < 1s.
(5) See chip biasing options pp7
Ref. : DSCHA20693246 - 03 Sep 13
2/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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डाउनलोड[ CHA2069-99F Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CHA2069-99F18-31GHz Low Noise AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors


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