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CHA1008-99F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 80-105GHz Balanced Low Noise Amplifier - United Monolithic Semiconductors

भाग संख्या CHA1008-99F
समारोह 80-105GHz Balanced Low Noise Amplifier
मैन्युफैक्चरर्स United Monolithic Semiconductors 
लोगो United Monolithic Semiconductors लोगो 
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CHA1008-99F pdf
CHA1008-99F 80-105GHz Balanced Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, VD = 2.5V
Symbol
Parameter
Min Typ Max Unit
Freq
Frequency range
80 105 GHz
Gain Linear Gain
17 dB
NF Noise Figure
[80-90]GHz
[90-100]GHz
5.0
6.5 dB
[100-105]GHz
7.5
RLlin Input Return Loss
-14 dB
RLout Output Return Loss
-12 dB
IN/OUT Input & Output impedance in the chip plan
impedance
50 Ohms
OP1dB Output Power @1dB compression
5 dBm
VG1, VG2 Gate voltages (either on VG1 or VG2 or
both on VG1 & VG2)
+0.15
V
VD Drain voltage
2.5 V
ID Drain current
115 mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD Drain bias voltage
3V
ID Drain bias current
150 mA
VG1, VG2
Pin
Gate bias voltage
Maximum peak input power overdrive (2)
-2 to +0.8
0
V
dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Parameter
VD DC drain voltage
ID Drain current controlled with VG1 or VG2
VG1,
VG2
DC gate voltages linked together into the circuit (only one
can be used)
Values
2.5
115
+0.15
Unit
V
mA
V
Ref. : DSCHA10082128 - 07 May 12
2/8 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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भाग संख्याविवरणविनिर्माण
CHA1008-99F80-105GHz Balanced Low Noise AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors


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