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10NN15 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Unisonic Technologies

भाग संख्या 10NN15
समारोह DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=10NN15?> डेटा पत्रक पीडीएफ

10NN15 pdf
10NN15
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (Note 3)
Pulsed (Note 2)
ID
IDM
3
12
A
A
Power Dissipation
PD 2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=150V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=120V, ID=3A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=75V, VGS=10V, ID=3A,
RG=3.3(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=3A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IS=3A, VGS=0V, dIF/dt=100A/µs
Notes: 1. Pulse width 300µs, duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
150 V
10 µA
+100 nA
-100 nA
2 4V
400 m
420 672
60
40
pF
pF
pF
10 16 nC
2 nC
4 nC
6.5 ns
7 ns
14 ns
35 ns
1.3 V
40 ns
75 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-565.D

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