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25T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - TRIACs - nELL

भाग संख्या 25T
समारोह TRIACs
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
1 Page
		
<?=25T?> डेटा पत्रक पीडीएफ

25T pdf
SEMICONDUCTOR
25T Series RRooHHSS
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
SYMBOL
TEST CONDITIONS
QUADRANT
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 30Ω
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2)
(dI/dt)c(2)
VD = 67% VDRM, gate open ,Tj = 125°C
Without snubber, Tj = 125°C
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MIN.
MAX.
MAX.
MIN.
25Txxxx
CW BW
35 50
1.3
0.2
50 75
70 80
80 100
500 1000
13 22
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
SYMBOL
TEST CONDITIONS
QUADRANT
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 30Ω
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2)
(dV/dt)c(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c =13.3 A/ms, Tj = 125°C
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MAX.
MIN.
MIN.
25Txxxx
B
50
100
1.3
0.2
80
70
160
500
10
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VTM(2)
ITM = 35 A, tP = 380 µs
Tj = 25°C
Vt0(2)
Rd(2)
Threshold voltage
Dynamic resistance
Tj = 125°C
Tj = 125°C
IDRM
IRRM
VD = VDRM
VR = VRRM
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
SYMBOL
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
S = 1 cm2
S = Copper surface under tab.
www.nellsemi.com
TO-3P
TO-263/TO-220AB
TO-3P Insulated
TO-220AB Insulated
TO-263
TO-220AB Insulated, TO-220AB
TO-3P, TO-3P Insulated
Page 2 of 6
VALUE
1.55
0.85
16
5
3
VALUE
0.6
0.8
0.9
1.7
45
60
50
Unit
mA
V
V
mA
mA
V/µs
A/ms
UNIT
mA
V
V
mA
mA
V/µs
V/µs
UNIT
V
V
µA
mA
UNIT
°C/W

विन्यास 6 पेज
डाउनलोड[ 25T Datasheet.PDF ]


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