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IRFP3306PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP3306PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP3306PBF pdf
IRFP3306PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
60
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
230
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)h
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
3.3
–––
–––
–––
–––
–––
0.7
Typ.
–––
85
20
26
59
15
76
40
77
4520
500
250
720
880
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 5mAd
4.2 mΩ VGS = 10V, ID = 75A g
4.0 V VDS = VGS, ID = 150μA
20
250
100
-100
–––
μA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Ω
Max. Units
Conditions
––– S VDS = 50V, ID = 75A
120 nC ID = 75A
––– VDS =30V
VGS = 10V g
––– ID = 75A, VDS =0V, VGS = 10V
––– ns VDD = 30V
––– ID = 75A
––– RG = 2.7Ω
––– VGS = 10V g
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz, See Fig. 5
––– VGS = 0V, VDS = 0V to 48V i, See Fig. 11
––– VGS = 0V, VDS = 0V to 48V h
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) d
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 160c A MOSFET symbol
––– ––– 620
showing the
A integral reverse
G
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
––– 31
ns TJ = 25°C
VR = 51V,
––– 35
––– 34
TJ = 125°C
nC TJ = 25°C
IF = 75A
di/dt = 100A/μs g
––– 45
TJ = 125°C
––– 1.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 1400A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.04mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use
above this value .
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
2 www.irf.com

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