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S5981 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Si PIN photodiode - Hamamatsu Corporation

भाग संख्या S5981
समारोह Si PIN photodiode
मैन्युफैक्चरर्स Hamamatsu Corporation 
लोगो Hamamatsu Corporation लोगो 
पूर्व दर्शन
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S5981 pdf
Si PIN photodiode S5980, S5981, S5870
s Spectral response
0.8
0.7
0.6
0.5
(Typ. Ta=25 ˚C)
s Photo sensitivity temperature characteristic s Dark current vs. reverse voltage
(Typ. )
(Typ. Ta=25 ˚C)
+1.5 10 nA
S5870
+1.0 1 nA
S5981
0.4 +0.5 100 pA
S5980
0.3
0.2 0 10 pA
0.1
200 400 600 800 1000
-0.5
190
WAVELENGTH (nm)
KMPDB0122EA
s Terminal capacitance vs. reverse voltage
1 nF
(Typ. Ta=25 ˚C, f=1 MHz)
S5981
S5870
100 pF
400 600 800 1000
1 pA
0.01
0.1
1
10
WAVELENGTH (nm)
KMPDB0123EA
REVERSE VOLTAGE (V)
s Dimensional outlines (unit: mm)
S5980
8.8 ± 0.2
(4 ×) R0.3
ACTIVE AREA
ad
100
KMPDB0124EA
10 pF
1 pF
S5980
INDEX MARK
PHOTOSENSITIVE SILICONE
SURFACE
RESIN
bc
0.03
DETAILS OF
ACTIVE AREA
100 fF
0.1
1 10
REVERSE VOLTAGE (V)
100
KMPDB0125EA
(4 ×) R0.3
ACTIVE AREA
S5981
14.5 ± 0.2
PHOTOSENSITIVE SILICONE
SURFACE
RESIN
ad
bc
0.03
DETAILS OF
ACTIVE AREA
(10 ×) 0.6
1.27
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
NC
NC
ANODE a
Burrs shall protrude no more than 0.3 mm on
any side of package.
(4 ×) R0.3
ACTIVE AREA
S5870
14.5 ± 0.2
KMPDA0036EB
ab
PHOTOSENSITIVE SILICONE
SURFACE
RESIN
0.03
DETAILS OF
ACTIVE AREA
(10 ×) 1.2
2.54
ANODE b
NC
CATHODE COMMON
NC
ANODE c
ANODE d
NC
NC
NC
ANODE a
(10 ×) 1.2
2.54
NC
ANODE a
CATHODE COMMON
ANODE b
NC
NC
NC
NC
NC
NC
Burrs shall protrude no more than 0.3 mm on
any side of package.
KMPDA0037EA
Burrs shall protrude no more than 0.3 mm on
any side of package.
KMPDA0113EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIN1012E04
2 Jun. 2010 DN

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डाउनलोड[ S5981 Datasheet.PDF ]


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