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WTA20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20A Triacs - STMicroelectronics

भाग संख्या WTA20
समारोह 20A Triacs
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=WTA20?> डेटा पत्रक पीडीएफ

WTA20 pdf
Characteristics
1 Characteristics
WTA20
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dI/dt
VDSM,
VRSM
IGM
VGM
PG(AV)
Tstg
Tj
On-state rms current (full sine wave)
Tc = 70 °C
20
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
F = 60 Hz
t = 10 ms
t = 8.3 ms
210
200
A
I²t Value for fusing
tp = 10 ms
200 A²s
Repetitive
Critical rate of rise of on-state current F = 50 Hz
IG = 2 x IGT, tr 100 ns
Tj = 125 °C
50
A/µs
Non repetitive
100
Non repetitive peak off-state voltage tp = 10 ms
Tj = 25 °C
VDSM/VRSM +
100
V
Peak gate current
Peak positive gate voltage
Average gate power dissipation
tp = 20 µs
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tj = 125 °C
4
16
Tj = 125 °C
1
- 40 to + 150
- 40 to + 125
A
V
W
°C
Table 2.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
WTA20
BW CW
Unit
IGT (1)
VGT
VGD
IH (2)
VD = 12 V, RL = 33
VD = VDRM, RL = 3.3 kTj = 125 °C
IT = 500 mA, gate open
IL IG = 1.2 IGT
dV/dt (2) VD = 67% VDRM, gate open
(dV/dt)c (2) (dI/dt)c = 20 A/ms 
ALL
ALL
ALL
I - III
II
I - II - III
Tj = 125 °C
Tj = 125 °C
Min.
Max.
Max.
Min.
Max.
Typ.
Max.
Typ.
Min.
Typ.
Min.
21
50 35
1.5
0.2
75 50
50 -
90 -
- 80
750 500
500 250
36 22
18 11
mA
V
V
mA
mA
V/µs
V/µs
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
2/6

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