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IRFP250 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRFP250
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP250?> डेटा पत्रक पीडीएफ

IRFP250 pdf
IRFP250, SiHFP250
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
Case-to-Sink, Flat, Greased Surface
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 18 Ab
VDS = 50 V, ID = 18 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 30 A, VDS = 160 V,
see fig. 6 and 13b
VDD = 100 V, ID = 30 A,
Rg = 6.2 Ω, RD = 3.2 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN. TYP. MAX. UNIT
200 -
-V
- 0.27 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.085 Ω
12 -
-S
- 2800 -
- 780 -
- 250 -
pF
- - 140
- - 28 nC
- - 74
- 16 -
- 86 -
ns
- 70 -
- 62 -
- 5.0 -
nH
- 13 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 30
A
- - 120
Body Diode Voltage
VSD
TJ = 25 °C, IS = 30 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
trr
- 360 540 ns
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Body Diode Reverse Recovery Charge
Qrr
- 4.6 6.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91212
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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