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QM4015S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Ch 40V Fast Switching MOSFETs - UBIQ

भाग संख्या QM4015S
समारोह P-Ch 40V Fast Switching MOSFETs
मैन्युफैक्चरर्स UBIQ 
लोगो UBIQ लोगो 
पूर्व दर्शन
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<?=QM4015S?> डेटा पत्रक पीडीएफ

QM4015S pdf
QM4015S
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-8A
VGS=-4.5V , ID=-6A
VGS=VDS , ID =-250uA
VDS=-32V , VGS=0V , TJ=25
VDS=-32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-8A
VDS=0V , VGS=0V , f=1MHz
VDS=-20V , VGS=-4.5V , ID=-6A
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-40
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.023
10.5
16
-1.6
4.74
---
---
---
27
7
28
7.7
7.5
40
35
100
9.6
3500
323
222
Max.
---
---
13
20
-2.5
---
1
5
±100
---
14
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Diode Characteristics
Conditions
VDD=-25V , L=0.1mH , IAS=-30A
Min.
81
Typ.
---
Max.
---
Unit
mJ
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
---
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-54A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
Max.
-8.7
-18
-1
Unit
A
A
V
2

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