DataSheet.in

2N3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - NTE

भाग संख्या 2N3055
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=2N3055?> डेटा पत्रक पीडीएफ

2N3055 pdf
Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Second Breakdown
hFE
VCE(sat)
VBE(on)
IC = 4A, VCE = 4V
IC = 10A, VCE = 4V
IC = 4A, IB = 400mA
IC = 10A, IB = 3.3A
IC = 4A, VCE = 4V
20 70
5−−
− − 1.1 V
− − 3.0 V
− − 1.5 V
Second Breakdown Collector Current
with Base Forward Biased
Is/b VCE = 40V, t = 1.0s; Nonrepetitive
2.87 − − A
Dynamic Characteristics
Current GainBandwidth Product
SmallSignal Current Gain
SmallSignal Current Gain Cutoff
Frequency
fT IC = 500mA, VCE = 10V, f = 1MHz
hfe IC = 1A, VCE = 4V, f = 1kHz
fhfe VCE = 4V, IC = 1A, f = 1kHz
2.5 − − MHz
15 120
10 − − kHz
Note 2. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

विन्यास 2 पेज
डाउनलोड[ 2N3055 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N3053MEDIUM POWER SILICON NPN PLANAR TRANSISTORSeme LAB
Seme LAB
2N3053COMPLEMENTARY SILICON TRANSISTORSMicro Electronics
Micro Electronics


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English