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2N3055 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary Power Transistors - Multicomp

भाग संख्या 2N3055
समारोह Complementary Power Transistors
मैन्युफैक्चरर्स Multicomp 
लोगो Multicomp लोगो 
पूर्व दर्शन
1 Page
		
<?=2N3055?> डेटा पत्रक पीडीएफ

2N3055 pdf
2N3055, MJ2955
Complementary Power Transistors
Thermal Characteristics
Characteristic
Symbol
Thermal Resistance Junction to Case
Rθjc
Figure - 1 Power Derating
Maximum
1.52
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, RBE = 100)
Collector Cut off Current
(VCE = 30V, IB = 0)
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
(VCE = 100V, VBE(off) = 1.5V, TC = 150°C)
Emitter Cut off Current
(VEB = 7.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 4.0A, VCE = 4.0V)
(IC = 10A, VCE = 4.0A)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A)
(IC = 10A, IB = 3.3A)
Base-Emitter On Voltage
(IC = 4.0A, VCE = 4.0V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 500mA, VCE = 10V, f = 1.0MHz)
Small-Signal Current Gain
(IC = 1.0A, VCE = 4.0V, f = 1KHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
(2) fT = hfe ftest.
VCEO(sus)
VCER(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(on)
fT
hfe
60
70
-
-
-
20
5.0
-
-
2.5
15
Maximum
-
-
0.7
1.0
5.0
5.0
70
1.1
3.0
1.5
-
120
Unit
V
mA
-
V
MHz
-
Page 2
31/05/05 V1.0

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डाउनलोड[ 2N3055 Datasheet.PDF ]


शेयर लिंक


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