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QM4004D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Ch 40V Fast Switching MOSFETs - UBIQ

भाग संख्या QM4004D
समारोह N-Ch 40V Fast Switching MOSFETs
मैन्युफैक्चरर्स UBIQ 
लोगो UBIQ लोगो 
पूर्व दर्शन
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<?=QM4004D?> डेटा पत्रक पीडीएफ

QM4004D pdf
QM4004D
N-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=20A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=20A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=12A
VDD=12V , VGS=10V , RG=3.3Ω
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.034
9.5
13.5
1.5
-5.64
---
---
---
35.9
2.1
10.7
3.3
4.2
8.6
3.4
24.8
2.2
1314
120
88
Max.
---
---
11.5
16.5
2.5
---
1
5
±100
---
4.2
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=20A
Min.
45
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
42
85
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 175junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2

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