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BAS40-04LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Series Schottky Barrier Diode - ON Semiconductor

भाग संख्या BAS40-04LT1G
समारोह Dual Series Schottky Barrier Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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BAS40-04LT1G pdf
BAS4004LT1G, SBAS4004LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
V(BR)R
40
V
CT pF
5.0
Reverse Leakage
(VR = 25 V)
IR
mA
1.0
Forward Voltage
(IF = 1.0 mA)
VF mV
380
Forward Voltage
(IF = 10 mA)
VF mV
500
Forward Voltage
(IF = 40 mA)
VF V
1.0
100
10
150C
1.0 1 25C
85C
25C
- 40C - 55C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.8
100
TA = 150C
10 125C
1.0 85C
0.1
0.01 25C
0.001
0
5.0 10 15 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
25
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
35
40
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