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IRFP254N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRFP254N
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP254N?> डेटा पत्रक पीडीएफ

IRFP254N pdf
IRFP254N, SiHFP254N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.68
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 14 Ab
VDS = 25 V, ID = 14 A
250 -
-V
- 0.33 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.125 Ω
15 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 2040 -
- 260 -
- 62 -
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
ID = 14 A, VDS = 200 V,
see fig. 6 and 13b
VGS = 10 V
VDD = 125 V, ID = 14 A,
RG = 3.6 Ω, see fig. 10b
-
-
-
-
-
-
-
- 100
- 17 nC
- 44
14 -
34 -
ns
37 -
29 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D - 5.0 -
package and center of
G
nH
LS die contact
- 13 -
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 23
A
- - 92
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
- - 1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 210 310 ns
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs
- 1.7 2.6 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 400 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08

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डाउनलोड[ IRFP254N Datasheet.PDF ]


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