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N0412N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET - Renesas

भाग संख्या N0412N
समारोह N-CHANNEL MOSFET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
1 Page
		
<?=N0412N?> डेटा पत्रक पीडीएफ

N0412N pdf
N0412N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
MIN.
2.0
26
TYP.
2.7
MAX.
1
±100
4.0
3.7
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 A
VGS = 10 V, ID = 50 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
5550
580
320
29.0
15.0
64.0
13.0
100
26
32
40
44
1.5
pF VDS = 25 V,
pF VGS = 0 V,
pF f = 1 MHz
ns VDD = 20 V, ID = 50 A,
ns VGS = 10 V,
ns RG = 0 Ω
ns
nC VDD = 32 V,
nC VGS = 10 V,
nC ID = 100 A
V IF = 100 A, VGS = 0 V
ns IF = 50 A, VGS = 0 V,
nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Page 2 of 6

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