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CEN7002A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEN7002A
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEN7002A?> डेटा पत्रक पीडीएफ

CEN7002A pdf
CEN7002A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Time
Turn-Off Time
Symbol
Test Condition
Min
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = 16V, VDS = 0V
VGS = -16V, VDS = 0V
60
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.25A
VGS = 4.5V, ID = 0.2A
VDS = 15V, ID = 0.2A
1
VDS = 5V, VGS = 0V,
f = 1.0 MHz
td(on)
td(off)
VDD = 10V, ID = 0.25A,
VGS = 10V, RGEN = 10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 0.25A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 0.2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Typ
1.2
1.8
0.6
30
6.5
2.1
9
21
0.6
0.1
0.08
Max Units
V
1 µA
0.1 µA
-0.1 µA
2.5 V
3
4
S
pF
pF
pF
15 ns
26 ns
0.7 nC
nC
nC
0.8 A
1.2 V
7
7 - 31

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डाउनलोड[ CEN7002A Datasheet.PDF ]


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