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CEP02N9 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP02N9
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP02N9?> डेटा पत्रक पीडीएफ

CEP02N9 pdf
CEP02N9/CEB02N9
CEF02N9
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 900V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
900
25
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1.3A
2
4
5.3 6.8
V
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
690
70
pF
pF
Crss 15 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450V, ID = 2.2A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 720V, ID = 2.2A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
20 40 ns
34 68 ns
44 88 ns
28 56 ns
16 20 nC
3 nC
7 nC
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A
2A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
2

विन्यास 4 पेज
डाउनलोड[ CEP02N9 Datasheet.PDF ]


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