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CEB9060N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEB9060N
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEB9060N?> डेटा पत्रक पीडीएफ

CEB9060N pdf
CEP9060N/CEB9060N
CEF9060N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 55V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 62A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 25V, ID = 62A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 28V, ID = 62A,
VGS = 10V, RGEN = 4.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 44V, ID = 62A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 62A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
Min
55
2
Typ
8.5
30
3695
765
60
24
11.9
60
19
68.1
12.6
22.7
Max Units
25
100
-100
V
µA
nA
nA
4V
10.5 m
S
pF
pF
pF
48 ns
23.8 ns
120 ns
38 ns
90.5 nC
nC
nC
62 A
1.3 V
4
2

विन्यास 4 पेज
डाउनलोड[ CEB9060N Datasheet.PDF ]


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