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CEP84A4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP84A4
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP84A4?> डेटा पत्रक पीडीएफ

CEP84A4 pdf
CEP84A4/CEB84A4
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
Min Typ Max Units
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
V
1 µA
80 nA
-80 nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 20A
1
3V
3.9 5.1 m
5.6 7.8 m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 16A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 20A
3070
385
285
pF
pF
pF
19 38 ns
10 20 ns
84 168 ns
22 44 ns
67 81 nC
10 nC
12 nC
90 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2

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डाउनलोड[ CEP84A4 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CEP84A4N-Channel Enhancement Mode Field Effect TransistorCET
CET


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