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60R900P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MMD60R900P - MagnaChip

भाग संख्या 60R900P
समारोह MMD60R900P
मैन्युफैक्चरर्स MagnaChip 
लोगो MagnaChip लोगो 
पूर्व दर्शन
1 Page
		
<?=60R900P?> डेटा पत्रक पीडीएफ

60R900P pdf
MMD60R900P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
Rating
600
±30
4.5
2.7
13.5
38
46
50
Unit
V
V
A
A
A
W
mJ
V/ns
Note
TC=25
TC=100
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
dv/dt
Tstg
Tj
15
-55 ~150
150
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
3.25
62.5
Unit
/W
/W
Jul. 2013 Revision 1.0
2 MagnaChip Semiconductor Ltd.

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डाउनलोड[ 60R900P Datasheet.PDF ]


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