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ZXTN26020DMF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN BIPOLAR TRANSISTOR - Diodes

भाग संख्या ZXTN26020DMF
समारोह NPN BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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ZXTN26020DMF pdf
Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Notes:
3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
1.2 1,000
1.0
Note 3
0.8
100
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Value
20
20
7
1.5
4
0.5
Unit
V
V
V
A
A
A
Value
1
380
125
330
-55 to +150
Unit
W
mW
°C/W
°C/W
°C
Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 328°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.6 10
0.4
Note 4
0.2
1
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.00001
0.001
0.1
10 1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 328°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
10
100
1,000
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated

विन्यास 6 पेज
डाउनलोड[ ZXTN26020DMF Datasheet.PDF ]


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