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52N15D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRFB52N15D - International Rectifier

भाग संख्या 52N15D
समारोह IRFB52N15D
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=52N15D?> डेटा पत्रक पीडीएफ

52N15D pdf
IRFB/IRFS/IRFSL52N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– –––
0.16 –––
––– 0.032
––– 5.0
––– 25
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A „
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
19 ––– ––– S VDS = 50V, ID = 36A
Qg Total Gate Charge
––– 60 89
ID = 36A
Qgs Gate-to-Source Charge
––– 18 27 nC VDS = 75V
Qgd Gate-to-Drain ("Miller") Charge
––– 28 42
VGS = 10V, „
td(on)
Turn-On Delay Time
––– 16 –––
VDD = 75V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 47 ––– ns ID = 36A
––– 28 –––
RG = 2.5
tf Fall Time
––– 25 –––
VGS = 10V „
Ciss Input Capacitance
––– 2770 –––
VGS = 0V
Coss Output Capacitance
––– 590 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 110 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 3940 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 260 –––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 550 –––
VGS = 0V, VDS = 0V to 120V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚†
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
470
36
32
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 60
––– ––– 240
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V „
––– 140 210 nS TJ = 25°C, IF = 36A
––– 780 1170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com

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