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ZXTNS618MC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION - Diodes

भाग संख्या ZXTNS618MC
समारोह 20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=ZXTNS618MC?> डेटा पत्रक पीडीएफ

ZXTNS618MC pdf
NPN - Maximum Ratings @ TA = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Notes 4 and 7)
(Notes 5 and 7)
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
A Product Line of
Diodes Incorporated
ZXTNS618MC
Limit
40
20
7
12
4.5
5
1
Unit
V
A
NPN - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
Symbol
PD
RθJA
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 9)
RθJL
TJ, TSTG
17.1
-55 to +150
°C
Notes:
4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
2 of 10
www.diodes.com
June 2011
© Diodes Incorporated

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