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FSJ055R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs - Intersil Corporation

भाग संख्या FSJ055R
समारोह 70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=FSJ055R?> डेटा पत्रक पीडीएफ

FSJ055R pdf
FSJ055D, FSJ055R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063 in. (1.6mm) from Case, 10s Max)
FSJ055D, FSJ055R
60
60
70
54
200
±20
125
50
1.20
200
70
200
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
tD(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (12)
Qg (TH)
Qgs
Qgd
V(PLATEAU)
CISS
COSS
CRSS
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 48V,
VGS = 0V
VGS = ±20V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 70A
ID = 54A,
TC = 25oC
VGS = 12V
TC = 125oC
VDD = 30V, ID = 70A,
RL = 0.43, VGS 12V,
RGS = 2.35
VGS = 0V to 20V
VGS = 0V to 12V
VGS = 0V to 2V
VDD = 30V,
ID = 70A
ID = 70A, VDS = 15V
VDS = 25V, VGS = 0V,
f = 1MHz
MIN TYP MAX UNITS
60 - - V
- - 5.0 V
1.5 - 4.0 V
0.5 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - 0.88 V
-
0.008 0.012
-
-
0.022
- - 40 ns
- - 200 ns
- - 70 ns
- - 40 ns
- - 280 nC
-
150 170
nC
- - 12 nC
- 35 43 nC
- 59 81 nC
-7-V
- 4850 -
pF
- 2200 -
pF
- 425 -
pF
-
-
0.83
oC/W
- - 40 oC/W
2

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डाउनलोड[ FSJ055R Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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FSJ055D70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETsIntersil Corporation
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FSJ055R70A/ 60V/ 0.012 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETsIntersil Corporation
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