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FQD3N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD3N60C
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD3N60C?> डेटा पत्रक पीडीएफ

FQD3N60C pdf
Package Marking and Ordering Information
Device Marking
FQD3N60C
FQD3N60C
Device
FQD3N60CTM
FQD3N60CTF
Package
D-PAK
D-PAK
Reel Size
380mm
380mm
Tape Width
16mm
16mm
Quantity
2500
2000
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
600
--
--
--
--
--
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.2A
VDS = 40V, ID = 1.2A
2.0
--
(Note 4)
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
VDD = 300V, ID = 3A
RG = 25
VDS = 480V, ID = 3A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.4A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 3A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.6
--
--
--
--
--
2.8
3.5
435
45
5
12
30
35
35
10.5
2.1
4.5
--
--
--
260
1.6
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
3.4
-- S
565 pF
60 pF
8 pF
34 ns
70 ns
80 ns
80 ns
14 nC
-- nC
-- nC
3A
12 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.4A, VDD = 50V, L=47mH, RG = 25, Starting TJ = 25°C
3. ISD 3A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
600V N-Channel MOSFET REV. A
2
www.fairchildsemi.com

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डाउनलोड[ FQD3N60C Datasheet.PDF ]


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