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J511 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SJ511 - Toshiba

भाग संख्या J511
समारोह 2SJ511
मैन्युफैक्चरर्स Toshiba 
लोगो Toshiba लोगो 
पूर्व दर्शन
1 Page
		
<?=J511?> डेटा पत्रक पीडीएफ

J511 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 1 A
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD ≈ −24 V, VGS = 10 V, ID = 2 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
(Note 1)
IDR (Note 1)
Pulse drain reverse current
(Note 1)
IDRP (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
VDSF
trr
Qrr
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / µs
2SJ511
Min
30
0.8
0.7
Typ.
0.55
0.32
1.4
160
30
85
Max
±10
100
2.0
0.76
0.45
Unit
µA
µA
V
V
S
pF
— 30 —
— 45 —
ns
— 30 —
— 120 —
— 5.5 —
— 4.3 —
— 1.2 —
nC
Min Typ. Max Unit
— — 2 A
— — 6 A
— — 1.5 V
— 40 — ns
— 18 — nC
2 2002-08-09

विन्यास 6 पेज
डाउनलोड[ J511 Datasheet.PDF ]


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