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2N3055H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - Inchange Semiconductor

भाग संख्या 2N3055H
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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<?=2N3055H?> डेटा पत्रक पीडीएफ

2N3055H pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3055H
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0
VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 30V; IB=0
VCE= 100V; VBE(off)= 1.5V
VCE= 100V; VBE(off)= 1.5V,TC=150
VEB= 7.0V; IC=0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
Is/b
fT
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
IC= 10A ; VCE= 4V
VCE= 40V,t= 1.0s,Nonrepetitive
IC= 0.5A ; VCE= 10V;f=1.0MHz
MIN MAX UNIT
100 V
70 V
1.1 V
3.0 V
1.5 V
0.7 mA
1.0
5.0
mA
5.0 mA
20 70
5.0
2.87 A
2.5 MHz
isc Websitewww.iscsemi.cn
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