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NCE85H21T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE N-Channel Enhancement Mode Power MOSFET - NCE Power

भाग संख्या NCE85H21T
समारोह NCE N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power 
लोगो NCE Power लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE85H21T?> डेटा पत्रक पीडीएफ

NCE85H21T pdf
http://www.ncepower.com
Pb Free Product
NCE85H21T
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.45 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85 -
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±200 nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25
Drain-Source On-State Resistance
125
RDS(ON)
VGS=10V, ID=40A
- 3.2 4.5
- 5 6.8
m
m
Forward Transconductance
gFS
VDS=25V,ID=40A
100 165
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 11000
- 914
-
-
PF
PF
Crss
- 695
-
PF
Switching Characteristics
Turn-on Delay Time
td(on)
- 23
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
- 190
- 130
- 120
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 250
Qgs ID=30A,VDD=30V,VGS=10V -
48
Qgd - 98
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V,IS=40A
- - 1.2
V
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 63
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 98
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=42.5V,VG=10V,L=2mH,Rg=25,IAS=37A
4. ISD125A, di/dt260A/μs, VDDV(BR)DSSTJ 175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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