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NCE85H15 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE N-Channel Enhancement Mode Power MOSFET - NCE Power

भाग संख्या NCE85H15
समारोह NCE N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power 
लोगो NCE Power लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE85H15?> डेटा पत्रक पीडीएफ

NCE85H15 pdf
http://www.ncepower.com
Pb Free Product
NCE85H15
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1100
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.56 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85 89
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2 2.85
4
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=40A
VDS=25V,ID=40A
- 3.9
110 -
4.8
-
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 8800
- 680
-
-
PF
PF
Crss
- 520
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 22.5
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDD=30V,ID=2A,RL=15- 15
-
td(off)
,RG=2.5,VGS=10V
- 70
-
tf
- 18.75
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 200
- 40
- 60
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 150
A
trr Tj=25,IF=75A,di/dt=100A/μs -
45 nS
Qrr (Note3) - 70 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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