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NCE80H11D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE N-Channel Enhancement Mode Power MOSFET - NCE Power

भाग संख्या NCE80H11D
समारोह NCE N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power 
लोगो NCE Power लोगो 
पूर्व दर्शन
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<?=NCE80H11D?> डेटा पत्रक पीडीएफ

NCE80H11D pdf
http://www.ncepower.com
Pb Free Product
NCE80H11D
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
TJ,TSTG
RθJC
-55 To 175
0.75
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
80 86
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=80V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
23
- 6.3
4
8
V
m
Forward Transconductance
gFS
VDS=25V,ID=40A
80 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 4900
- 410
-
-
PF
PF
Crss
- 315
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 20
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDD=30V,ID=2A,RL=15,
-
19
td(off)
RG=2.5,VGS=10V
- 70
-
-
nS
nS
Turn-Off Fall Time
tf
- 30
-
nS
Total Gate Charge
Gate-Source Charge
Qg - 125
Qgs ID=30A,VDD=30V,VGS=10V -
24
-
-
nC
nC
Gate-Drain Charge
Qgd
- 49
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IS
- - 105
A
trr
Tj=25,IF=75A,
- 37
nS
Qrr
di/dt=100A/uS (Note3)
- 58
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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