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NCE8601B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE8601B
समारोह NCE N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE8601B?> डेटा पत्रक पीडीएफ

NCE8601B pdf
http://www.ncepower.com
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE8601B
Condition
VGS=±10V,VDS=0V
Min Typ Max
- - ±10
Unit
μA
VDS=VGS,ID=250μA
VGS=10V, ID=8A
VGS=4.5V, ID=5.5A
VDS=5V,ID=8A
0.55 0.7
- 15
- 18
- 20
0.95
21
26
-
V
m
m
S
VDS=15V,VGS=0V,
F=1.0MHz
- 870
- 130
- 100
-
-
-
PF
PF
PF
VDD=15V,RL=1.25
VGS=10V,RGEN=3
VDS=15V,ID=8A,
VGS=4.5V
-5
- 3.5
- 19
- 3.5
- 15
- 2.5
-3
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=8A
- - 1.2
--
8
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v10

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