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NCE9926 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE9926
समारोह NCE N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE9926?> डेटा पत्रक पीडीएफ

NCE9926 pdf
http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS VDS=20V,VGS=0V
IGSS VGS=±10V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Forward Transconductance
gFS VDS=5V,ID=6A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=10V,ID=1A
VGEN=4.5V,RG=6
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
Qg
Qgs
VDS=10V,ID=3A,
VGS=4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=1.7A
Diode Forward Current (Note 2)
IS
Pb Free Product
NCE9926
Min Typ Max Unit
20 22
-
--
1
- - ±100
V
μA
nA
0.5
- 26
- 36
20 -
1.2
30
40
-
V
m
S
- 640
- 140
- 80
-
-
-
PF
PF
PF
-8
-9
- 15
-4
- 10
- 1.5
- 1.6
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.1

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