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NCE9435 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NCE P-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE9435
समारोह NCE P-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE9435?> डेटा पत्रक पीडीएफ

NCE9435 pdf
http://www.ncepower.com
Pb Free Product
NCE9435
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IDSS
VDS=-24V,VGS=0V
- - -1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-5.1A
VGS=-4.5V, ID=-4.2A
VDS=-15V,ID=-4.5A
-1 -1.6
-3
- 48 55
- 73 105
47
-
V
m
m
S
Clss
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
- 1040
- 420
-
-
PF
PF
Crss
- 150
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
-
-
-
VDS=-15V,ID=-5.1A,VGS=-10V
-
-
-
15
13
58
21
12
2.2
3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=-1.7A
- - -1.2 V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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डाउनलोड[ NCE9435 Datasheet.PDF ]


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