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2MBI1200U4G-170 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Fuji Electric

भाग संख्या 2MBI1200U4G-170
समारोह IGBT Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
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<?=2MBI1200U4G-170?> डेटा पत्रक पीडीएफ

2MBI1200U4G-170 pdf
2MBI1200U4G-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C, chip
2800
2400
VGE=20V 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0 2.0 3.0 4.0
Collector-Emitter voltage : VCE [V]
5.0
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C, chip
2800
2400
VGE=20V 15V
12V
2000
1600
1200
10V
800
400 8V
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V, chip
2800
2400
Tj=25°C
Tj=125°C
2000
1600
1200
800
400
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C, chip
10
8
6
4
Ic=2400A
2 Ic=1200A
Ic=600A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
1000
Cies
100
10 Cres
Coes
1
0 10 20 30
Collector-Emitter voltage : VCE[V]
Dynamic Gate charge (typ.)
Tj=25°C
1000
25
VCE
800
VGE
20
600 15
400 10
200 5
00
0 1000 2000 3000 4000 5000
Gate charge : Qg [nC]
2

विन्यास 6 पेज
डाउनलोड[ 2MBI1200U4G-170 Datasheet.PDF ]


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