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2MBI150U4H-120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Fuji Electric

भाग संख्या 2MBI150U4H-120
समारोह IGBT Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
1 Page
		
<?=2MBI150U4H-120?> डेटा पत्रक पीडीएफ

2MBI150U4H-120 pdf
2MBI150U4H-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
400 Tj=25oC / chip
VGE=20V 15V 12V
300
200
100
0
0
10V
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400
Tj=25oC
300
Tj=125oC
200
100
0
012345
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
100.0
VGE=0V, f=1MHz, Tj=25oC
Cies
10.0
Cres
1.0
Coes
0.1
0 10 20 30
Collector-Emitter voltage : VCE [ V ]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
400
VGE=20V 15V
12V
300
200
100
0
0
10V
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
2
Ic=300A
Ic=150A
Ic=75A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj=25oC
VGE
0
0
2
VCE
200 400 600
Gate charge : Qg [ nC ]
800

विन्यास 5 पेज
डाउनलोड[ 2MBI150U4H-120 Datasheet.PDF ]


शेयर लिंक


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भाग संख्याविवरणविनिर्माण
2MBI150U4H-120IGBT ModuleFuji Electric
Fuji Electric


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