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2MBI100VA-060-50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Fuji Electric

भाग संख्या 2MBI100VA-060-50
समारोह IGBT Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
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<?=2MBI100VA-060-50?> डेटा पत्रक पीडीएफ

2MBI100VA-060-50 pdf
2MBI100VA-060-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
VGE=20V 15V 12V
200
150
10V
100
50
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
250
Tj=25°C 125°C
200 150°C
150
100
50
0
0123
Collector-Emitter Voltage: VCE [V]
4
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
10 Cies
1 Cres
0.1
0
Coes
10 20
Collector-Emitter voltage: VCE [V]
30
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
250
200
VGE= 20V 15V
12V
150
10V
100
50
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
8
6
4
2 IC=200A
IC=100A
IC=50A
0
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
20
15
10
5
0
-5
-10
-15
-20
-1.5
Dynamic Gate Charge (typ.)
VCC=300V, IC=100A, Tj= 25°C
VCE
VGE
-0.5 0.5
Gate charge: Qg [μC]
400
300
200
100
0
-100
-200
-300
-400
1.5
2

विन्यास 6 पेज
डाउनलोड[ 2MBI100VA-060-50 Datasheet.PDF ]


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