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1MBI200U4H-120L-50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Fuji Electric

भाग संख्या 1MBI200U4H-120L-50
समारोह IGBT Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
1 Page
		
<?=1MBI200U4H-120L-50?> डेटा पत्रक पीडीएफ

1MBI200U4H-120L-50 pdf
1MBI200U4H-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip(*4)
Note *4: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
IR
VF
(terminal)
VF
(chip)
trr
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
Tj=25°C
VGE = 15V
IC = 200A
Tj=125°C
Tj=25°C
Tj=125°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 200A
VGE = ±15V, RG = 3Ω
VGE = 0V
IF = 100A
VCE = 1200V
VGE = 0V
IF =300A
IF = 300A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Items
Symbols Conditions
IGBT
Thermal resistance (1device)
Rth(j-c)
Inverse Diode
FWD
Contact thermal resistance
Rth(c-f) with Thermal Compound (*5)
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 2.0
- - 400
4.5 6.5 8.5
- 2.10 2.25
- 2.30 -
- 1.90 2.05
- 2.10 -
- 22 -
- 0.32 1.20
- 0.10 0.60
- 0.03 -
- 0.41 1.00
- 0.07 0.30
- 1.75 1.90
- 1.85 -
- 1.60 1.75
- 1.75 -
- - 3.0
- 1.85 2.00
- 2.00 -
- 1.60 1.75
- 1.75 -
- - 0.35
- 1.00 -
Units
mA
nA
V
V
nF
µs
V
mA
V
µs
mΩ
Characteristics
min. typ. max.
- - 0.12
- - 0.40
- - 0.13
- 0.025 -
Units
°C/W
2

विन्यास 7 पेज
डाउनलोड[ 1MBI200U4H-120L-50 Datasheet.PDF ]


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