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1MBI300U2H-060L-50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Module - Fuji Electric

भाग संख्या 1MBI300U2H-060L-50
समारोह IGBT Module
मैन्युफैक्चरर्स Fuji Electric 
लोगो Fuji Electric लोगो 
पूर्व दर्शन
1 Page
		
<?=1MBI300U2H-060L-50?> डेटा पत्रक पीडीएफ

1MBI300U2H-060L-50 pdf
1MBI300U2H-060L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
ICES
Gate-Emitter leakage current
IGES
Gate-Emitter threshold voltage
VGE(th)
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *3
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
VF
(terminal)
VF
(chip)
trr
R lead
VGE = 0V
VCE = 600V
VCE = 0V
VGE=±20V
VCE = 20V
IC = 300mA
Tj= 25°C
VGE=15V
IC = 300A
Tj=125°C
Tj= 25°C
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
VCC = 300V
IC = 300A
VGE = ±15V
RG = 9.1 Ω
VGE=0V
IF = 300A
IF = 300A
VGE=0V
IF = 400A
IF = 400A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Items
Symbols Conditions
IGBT
Thermal resistance (1device)
Rth(j-c)
Inverse Diode
FWD
Contact Thermal resistance (1device) *4
Rth(c-f)
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 2.00
Units
mA
- - 400 nA
6.2 6.7 7.7
V
- 2.05 2.45
- 2.30 -
- 1.80 -
V
- 2.05 -
- 23.0 -
nF
- 0.40 1.20
- 0.22 0.60
- 0.16 -
μs
- 0.48 1.20
- 0.07 0.45
- 1.85 2.30
- 1.90 -
- 1.60 -
V
- 1.65 -
- - 0.35 μs
- 1.85 2.35
- 1.90 -
- 1.60 -
V
- 1.65 -
- - 0.35 μs
- 0.53 -
Characteristics
min. typ. max.
- - 0.125
- - 0.23
- - 0.16
- 0.025 -
Units
°C/W
2

विन्यास 7 पेज
डाउनलोड[ 1MBI300U2H-060L-50 Datasheet.PDF ]


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