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W33N20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STW33N20 - STMicroelectronics

भाग संख्या W33N20
समारोह STW33N20
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=W33N20?> डेटा पत्रक पीडीएफ

W33N20 pdf
STW33N20
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
oC/ W
oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
33
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 100
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
200
Typ. Max.
10
100
± 100
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate
Voltage
Threshold VDS = VGS ID = 250 µA
St atic Drain-source On VGS = 10 V ID = 16 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.073 0.085
33 A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 16 A
Min.
10
Typ. Max.
22
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3500
550
120
4500
700
160
pF
pF
pF
2/9

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डाउनलोड[ W33N20 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
W33N20STW33N20STMicroelectronics
STMicroelectronics


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